A method directed to the use of a nonvolatile precursor, either a solid or liquid precursor, suitable for CVD, including liquid source CVD (LSCVD). Using the method of the invention the nonvolatile precursor is dissolved in a solvent. Choice of solvent is typically an inorganic compound that has a moderate to high vapor pressure at room temperature, which can be liquified by combination of pressure and cooling. The solution is then transported at an elevated pressure and/or a reduced temperature to the CVD chamber. The solution evaporates at a higher temperature and a lower pressure upon entry to the CVD chamber, and the nonvolatile precursor, in its gaseous state, along with a gas reactant, produces a product which is deposited on a semiconductor wafer. In LSCVD the liquid enters the chamber, contacts the wafer, evaporates, produces a product which is deposited as a thin film.