A negative differential resistance (NDR) field-effect transistor element is disclosed, formed on a silicon-based substrate using conventional MOS manufacturing operations. Methods for improving a variety of NDR characteristics for an NDR element, such as peak-to-valley ratio (PVR), NDR onset voltage (V.sub.NDR) and related parameters are also disclosed.

 
Web www.patentalert.com

> Quinoline derivatives as anti-inflammatory agents

~ 00331