A method used to form a semiconductor device comprises processing a semiconductor wafer to include one or more vias or through-holes only partially etched into the wafer, and scribe marks only partially etched into the wafer which define a plurality of semiconductor devices. Wafer material is removed from the back of the wafer to the level of the vias and scribe marks to form a via opening through the wafer while simultaneously dicing the wafer into individual semiconductor dice.