An electrostatic-discharge/impedance-matching circuit for use in radio frequency (RF) integrated circuits. The electrostatic-discharge/impedance-matching circuit includes at least one shunt circuit operable to shunt current related to an over-voltage condition and at least one series element operably coupled to the shunt element. The shunt element and series element in combination provide electrostatic discharge protection for the RF signal processing circuit elements on the integrated circuit and also provide a matched input impedance for an incoming RF signal. Various alternate embodiments of die electrostatic-discharge/impedance-matching circuit include first and second shunt elements and a series element operably connected in combination to provide optimal electrostatic discharge protection and impedance matching. The electrostatic-discharge/impedance-matching circuit can be placed at various locations on the integrated circuit to provide optimal petformance depending on the particular architecture of the integrated circuit.