Semiconductor structures, and methods for fabricating semiconductor structures, comprising high dielectric constant stacked structures are provided. A stacked dielectric structure (16) in accordance with one exemplary embodiment of the present invention has a first amorphous dielectric layer (18) comprising Hf.sub.XZr.sub.1-XO.sub.2, where 0.ltoreq.X.ltoreq.1. An amorphous interlayer (20) overlies the first amorphous dielectric layer. The interlayer has a net dielectric constant that is approximately no less than the dielectric constant of HfZrO.sub.4. A second amorphous dielectric layer (22) overlies the interlayer. The second amorphous dielectric layer comprises Hf.sub.YZr.sub.1-YO.sub.2, where 0.ltoreq.Y.ltoreq.1. The stacked dielectric structure (16) has a net dielectric constant that is approximately no less than the dielectric constant of HfZrO.sub.4.