Exemplary embodiments of the present invention include surface-emitting type semiconductor lasers including photodetector sections, which have a degree of freedom in designing its structure and are capable of high-speed driving. A surface-emitting type semiconductor laser in accordance with exemplary embodiments the present invention includes a light emitting element section, and a photodetector section that is provided above the light emitting element section and includes an emission surface. The light emitting element section includes a first mirror, an active layer provided above the first mirror, and a second mirror provided above the active layer. The second mirror is formed from a first region and a second region. The second region contacts the photodetector section, and the second region has a resistance greater than a resistance of the first region.