A method of forming a dual damascene structure on a substrate having a dielectric layer already formed thereon. In one embodiment the method includes depositing a first hard mask layer over the dielectric layer; depositing a second hard mask layer on the first hard mask layer; depositing a third hard mask layer on the second hard mask layer and completing formation of the dual damascene structure by etching a metal wiring pattern and a via pattern in the dielectric layer and filling the etched metal wiring pattern and via pattern with a conductive material. In one particular embodiment the second hard mask layer is an amorphous carbon layer and the third hard mask layer is a silicon-containing material.