A nitride semiconductor laser including a laminate that includes an n-side semiconductor layer, an active layer and a p-side semiconductor layer, the n-side semiconductor layer or p-side semiconductor layer including a current blocking layer 30 that is made of In.sub.xAl.sub.yGa.sub.1-x-yN (0.ltoreq.x.ltoreq.0.1, 0.5.ltoreq.y.ltoreq.1, 0.5.ltoreq.x+y.ltoreq.1) and has a stripe-shaped window 32 formed therein to pass current flow.