A method for forming a domain-inverted structure includes the following: using a ferroelectric substrate (1) having a principal surface substantially perpendicular to the Z axis of crystals; providing a first electrode (3) on the principal surface of the ferroelectric substrate, the first electrode having a pattern of a plurality of electrode fingers (5) that are arranged periodically; providing a counter electrode (6) on the other side of the ferroelectric substrate so as to be opposite from the first electrode; and applying an electric field to the ferroelectric substrate with the first electrode and the counter electrode, thereby forming domain-inverted regions corresponding to the pattern of the first electrode in the ferroelectric substrate. Each of the electrode fingers of the first electrode is located so that a direction from a base to a tip (5a) of the electrode finger is aligned with the Y-axis direction of the crystals of the ferroelectric substrate. This method can provide a short-period uniform domain-inverted structure.