A chemical-mechanical polishing (CMP) process for the manufacturing of semiconductor devices is disclosed. The process includes removing a first portion of a first layer of interconnect materials using a first platen and a first slurry, removing a second portion of the first layer using a second platen and a second slurry, removing a first portion of a second layer of the interconnect materials using a second platen and a third slurry, and removing a second portion of the second layer using a third platen and a fourth slurry.

 
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> Semiconductor device with a toroidal-like junction

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