The invention relates to a phase-change memory device. The device includes a lower electrode disposed in a recess of a first dielectric. The lower electrode comprises a first side and a second side. The first side communicates to a volume of phase-change memory material. The second side has a length that is less than the first side. Additionally, a second dielectric may overlie the lower electrode. The second dielectric has a shape that is substantially similar to the lower electrode.The present invention also relates to a method of making a phase-change memory device. The method includes providing a lower electrode material in a recess. The method also includes removing at least a portion of the second side.