A method of making a semiconductor structure, comprises etching a nitride layer with a plasma to form a patterned nitride layer. The nitride layer is on a semiconductor substrate, a photoresist layer is on the nitride layer, and the plasma is prepared from a gas mixture comprising CF.sub.4 and CHF.sub.3 at a pressure of at least 10 mTorr.

 
Web www.patentalert.com

> Oxygen plasma treatment for enhanced HDP-CVD gapfill

~ 00355