The invention includes a semiconductor device, and a method for making the same, wherein bumps of a semiconductor chip and inner leads of a film tape carrier can be securely bonded to each other by thermal welding using a heating unit. A semiconductor wafer is etched using a potassium iodide or ammonium iodide solution. By the etching, a barrier metal layer is removed while the upper face of a bump is simultaneously roughened and many prominences are formed. The formation of the prominences increases the surface area of the upper face of the bump 10 and improves the bonding between the bump of the semiconductor chip and the lead of the film tape carrier.