A storage device that is capable of receiving an analog signal and storing it as a digital signal. The storage device includes an input node configured to receive an analog input voltage and two non-volatile storage cells. A second non-volatile memory cell is coupled to receive the analog input signal from the input node. The second non-volatile memory cell is capable of being programmed to a one of a plurality of programming states. The first non-volatile memory cell, which is coupled to the second non-volatile memory cell, is also capable of being programmed to one of a plurality of programming states. During operation, the second non-volatile memory cell and the first non-volatile memory cell are both programmed to a selected second programming state indicative of the magnitude of the analog input voltage. The first programming state and the second programming state are together are indicative of a digital value commensurate with the magnitude of the analog input voltage.