After forming a hole in an insulating film, a first tungsten film is
formed over the wall and bottom surfaces of the hole. Then, a second
tungsten film is formed by using the first tungsten film as a seed layer
to fill up the hole. When the first tungsten film is formed, the average
value of the diameters of crystal grains of the portion of the first
tungsten film which is formed on the bottom surface of the hole is
suppressed to 30 nm or less.