A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 .mu.m or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5 50 nm.

 
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> Beam homogenizer, laser irradiation apparatus and method for manufacturing semiconductor device

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