A memory system architecture/interconnect topology includes a configurable width buffered memory module having a configurable width buffer device and at least one flyby element. A buffer device, such as a configurable width buffer device, is positioned between or with at least one integrated circuit memory device positioned on a substrate surface of a memory module, such as a DIMM. A flyby element is positioned on a memory module and/or in the buffer device and includes conductive element or signal line in embodiments of the invention. One or more flyby elements are coupled to one or more memory modules to allow for upgrades of memory modules in a memory system. An asymmetrical flyby topology allows for increasing the number of memory modules to more than two memory modules without increasing any more delay than is present in with two memory modules.