The present invention discloses a semiconductor device having a pad
structure for preventing a stress of a silicon nitride film. The
semiconductor device includes a semiconductor substrate, a lower
structure formed on the semiconductor substrate, a first insulation film
formed on the lower structure, a first metal layer coupled to the lower
structure through a first metal contact in the first insulation film, a
second metal layer formed on the first metal layer, and a plurality of
dummy gates having a concentric square structure formed at the lower
portion of the pad region on the second metal layer.