A semiconductor LED device includes: a transparent substrate stacked on which are an n-type nitride semiconductor layer, a nitride semiconductor light emission layer and a p-type nitride semiconductor layer; recess regions cutting the p-type layer and light emission layer and exposing the n-type layer, defining a plurality of mesa active regions and mesa electrode pull-up regions; an n-side electrode formed on the n-type layer in the recess surrounding the mesa active regions and extending onto the mesa electrode pull-up regions; a p-side electrode formed on the p-type layer of each of the mesa active regions; and a support substrate including n-side connection members connected to and facing the n-type electrodes and p-side connection members connected to and facing the p-side electrodes.