There is provided a high-reliability nano-dots memory by forming the nano dots uniformly. Also, there is provided the high-speed and high-reliability nano-dots memory by employing a silicon-oxide-film alternative material as a tunnel insulating film. The nano-dots memory includes the tunnel insulating film and silicide nano-dots of CoSi.sub.2 or NiSi.sub.2. Here, the tunnel insulating film is formed by epitaxially growing a high-permittivity insulating film of HfO.sub.2, ZrO.sub.2 or CeO.sub.2 on a silicon or germanium substrate, or preferably, on a silicon or germanium (111) substrate. Also, the silicide nano-dots are formed on the tunnel insulating film.