A high-voltage transistor device with an interlayer dielectric (ILD) etch stop layer for use in a subsequent contact hole process is provided. The etch stop layer is a high-resistivity film having a resistivity greater than 10 ohm-cm, thus leakage is prevented and breakdown voltage is improved when driving a high voltage greater than 5V at the gate site. A method for fabricating the high-voltage device is compatible with current low-voltage device processes and middle-voltage device processes.

 
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> Non-volatile semiconductor memory device having nano-dots on a tunnel insulating film

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