The semiconductor substrate comprises a first monitor part 14a formed in a
first region near a center of a semiconductor wafer 10, which includes a
first element having a first electrode 24 formed over the semiconductor
wafer 10 with a first insulation film 22 formed therebetween, and a first
electrode pad 32 electrically connected to the first electrode 24; and a
second monitor part 14b formed in a second region different from the
first region, which includes a second element having a second electrode
24 formed on the semiconductor wafer 10 with a second insulation film 22
formed therebetween, and a second electrode pad 32 electrically connected
to the second electrode 24. When electric breakdown has taken place in
both the first monitor part 14a and the second monitor part 14b, it can
be judged that too large static electricity was generated upon the
release of the surface protection film 39. When electric breakdown has
taken place in either of the first monitor part 14a and the second
monitor part 14b, the electric breakdown has taken place due to factors
other than the static electricity generated upon the release of the
surface protection film. When electric breakdown has taken place in
neither of the first monitor part 14a and the second monitor part 14b, it
can be judged that too large static electricity was generated upon the
release of the surface protection film 39. Thus, factors for defects of
semiconductor devices can be identified, which leads to improved quality
of the semiconductor devices.