In at least some embodiments, electronic devices suitable for use at temperatures in excess of 200 C. may comprise an integrated circuit fabricated on a silicon carbide substrate, and a thick passivation layer. In other embodiments, electronic devices suitable for use at temperatures in excess of 200 C. may comprise an integrated circuit formed from silicon located on a sapphire substrate, and a thick passivation layer. The electronic devices may be implemented in the context of hydrocarbon drilling and production operations.