Bipolar junction transistors (BJTs) are provided including silicon carbide (SiC) substrates. An epitaxial SiC base region is provided on the SiC substrate. The epitaxial SiC base region has a first conductivity type. An epitaxial SiC emitter region is also provided on the SiC substrate. The epitaxial SiC emitter region has a second conductivity type, different from the first conductivity type. The epitaxial SiC emitter region has first and second portions. The first portion is provided on the SiC substrate and the second portion is provided on the first portion. The second portion has a higher carrier concentration than the first portion. Related methods of fabricating BJTs are also provided herein.