A method of forming a crystal grain for use in a semiconductor manufacturing process, the method including the steps of forming an oxide silicon film on a glass substrate, etching at least one hole at a predetermined location in the oxide silicon film, forming an amorphous silicon film over the oxide silicon film, heating the amorphous silicon film such that a portion of the amorphous silicon film in the at least one hole is in a non-melting state and a substantial remainder of the amorphous silicon film is brought into a melting state, and allowing the amorphous silicon film to cool such that crystal growth is generated using the non-melting state portion as a crystal nucleus.