A light-emitting device is capable of oscillating in a convex-whispering
gallery mode. The lighting-emitting device includes a PIN-type
semiconductor including a p-type distributed Bragg reflector, an active
region and an n-type distributed Bragg reflector formed on a substrate by
an epitaxial growth, wherein the PIN-type semiconductor having a hole
with a predetermined diameter formed thereon, and an electrode connected
to a region around the hole for applying a current to the hole. Further
disclosed are a method for manufacturing the light-emitting device and an
array of light-emitting devices.