A method for generating an offset field for a magnetic random access memory (MRAM) device includes forming a first pinned layer integrally with a wordline, and forming a second pinned layer integrally with a bitline. An MRAM cell is disposed between the wordline and the bitline, the MRAM cell including a reference layer, an antiparallel free layer and a tunnel barrier therebetween. The first pinned layer is formed with an internal magnetization in a manner so as to create a first external field generally perpendicular to a long axis of the wordline, and the second pinned layer is formed with an internal magnetization in a manner so as to create a second external field generally perpendicular to a long axis of the bitline.