An improvement to an integrated circuit, of electrically conductive interconnects formed of a superconducting material. In this manner, the electrically conductive interconnects can be made very small, and yet still have adequate conductively. In various embodiments, all of the electrically conductive interconnects are formed of the superconducting material. In some embodiments, the electrically conductive interconnects are formed of a variety of different superconducting materials. In one embodiment, only the backend electrically conductive interconnects are formed of the superconducting material. In some embodiments no vias are formed of the superconducting material. The interconductor dielectric layers are preferably formed of silicon oxide, and sometimes all of the interconductor dielectric layers are formed of silicon oxide. The superconducting material is in some embodiments at least one of an organic compound such as a potassium doped buckminsterfullerene, a cesium doped buckminsterfullerene, and other carbon containing compounds, a metallic material such as an inter-metallic material like Nb--Ti alloys and other substances formed by alloying metals, and an inorganic compound such as YBa.sub.2Cu.sub.3O.sub.7-x, (Pb,Bi).sub.2Sr.sub.2Ca.sub.2Cu.sub.3O.sub.10-x and its derivatives, HgBaCaCuO and its derivatives, and TI--Ba--Ca--Cu--O and its derivatives.