A capacitor having a dielectric layer including a composite oxide, the
composite oxide including a transition metal and including a lanthanide
group element, a memory device including the same and a method of
manufacturing the capacitor are provided. The transition metal may be
titanium and the composite oxide may be nitrided. The method may include
providing a precursor of a transition metal, providing a precursor of a
lanthanide group element, and forming a composite oxide on the lower
electrode by oxidizing both the precursor of the transition metal and the
precursor of the lanthanide group element, the composite oxide containing
the transition metal and the lanthanide group element.