A method for manufacturing a thin film transistor results in a thin film transistor including a semiconductor film, a channel region provided in the semiconductor film, source and drain regions sandwiching the channel region, and a gate electrode facing the channel region with an intermediary of a gate insulating film. The method includes depositing a droplet that includes a semiconductor material on a substrate; and forming the semiconductor film by drying the droplet to precipitate the semiconductor material on at least a peripheral edge of the droplet.