After etching the interlayer dielectric film 4 formed on the lower layer
interconnect line 1 into a shape with holes, the upper layer dielectric
film 6 is etched into a shape with trenches utilizing the etching stopper
5. The etching stopper 5 which is exposed at the bottom of the trench is
removed by additional etching, and then, the interlayer dielectric film 4
which is exposed at the bottom of the trench is etched back to a
predetermined thickness. Subsequently, the hole and the trench are filled
with an interconnect metal 10.