A surface acoustic wave device is provided. The surface acoustic wave device includes a piezoelectric substrate and an IDT which is disposed on the piezoelectric substrate and made of Al or an alloy containing Al as a main component and using an SH wave as an excitation wave, wherein the piezoelectric substrate is a rotated Y-cut quartz plate having a cut angle .theta. set to a range of -64.0.degree.<.theta.<-49.3.degree. rotated counterclockwise from a Z crystalline axis and a propagation direction of a surface acoustic wave set to a direction of 90.degree..+-.5.degree. with respect to an X crystalline axis, wherein, when a wavelength of an excited surface acoustic wave is denoted by .lamda., an electrode film thickness H/.lamda. normalized with wavelength of the IDT is set to a range of 0.04