A hybrid topography mask is designed for facilitating the fabrication of a semiconductor wafer. The hybrid mask includes a substrate having a light receiving surface. The light receiving surface defines a plane. Pluralities of pattern elements are etched into and out of the light receiving surface. Each of the plurality of pattern elements defines a pattern surface that is parallel to the light receiving surface. Pattern sides extend between the pattern elements and the light receiving surface. Each of the pattern sides extends perpendicularly between the light receiving surface and the pattern elements. The hybrid mask also includes a tapered sub-resolution assist element etched out of the light receiving surface to position the mask with respect to the semiconductor wafer. The tapered sub-resolution assist element is fabricated to avoid affecting any photoresist residue from the sub-resolution assist element's presence on the semiconductor wafer disposed adjacent the hybrid mask.