A semiconductor laser device includes first and second conductivity type cladding layer side guide layers disposed in direct contact with respective surfaces of an active layer, sandwiching the active layer; and first and second conductivity type cladding layers disposed in direct contact with the first and second conductivity type cladding layer side guide layer, respectively. The first and second conductivity type cladding layer side guide layers are InGaAsP which is lattice-matched to GaAs and have an As composition ratio more than 0 and not exceeding 0.3. The first and second conductivity type cladding layers are AlGaAs, having an Al composition ratio less than 1.0 and at least equal to an Al composition ratio at which refractive index of the AlGaAs is less than the refractive index of the InGaAsP.