The present invention provides a semiconductor device capable of
preventing occurrence of cracking and the like, taking a large area,
where wiring and the like that function as elemental devices can be
arranged, within a plurality of interlayer insulation films, and reducing
production cost. The semiconductor device according to the present
invention has a low dielectric constant film having a dielectric constant
of not less than 2.7. In the low dielectric constant film and the like,
materials (e.g., a first dummy pattern, a second dummy pattern) with a
larger hardness than that of the low dielectric constant film are formed
at a part under a pad part.