Provided are an electrostatic discharge (ESD) protection device and a
method for making such a device. In one example, the ESD protection
device includes a Zener diode region formed in a substrate and an N-type
metal oxide semiconductor (NMOS) device formed adjacent to the Zener
diode region. The Zener diode region has two doped regions, a gate with a
grounded potential positioned between the two doped regions, and two
light doped drain (LDD) features formed in the substrate. One of the LDD
features is positioned between each of the two doped regions and the
gate. The NMOS device includes a source and a drain formed in the
substrate and a second gate positioned between the source and the drain.