Methods of cleaning a processing chamber of semiconductor device
fabrication equipment are highly effective in removing polymers produced
as a by-product of a fabrication process from surfaces in a processing
chamber. The cleaning process uses a plasma etchant produced from
cleaning gas including an O-based gas and at least one gas selected from
the group consisting of an F-based gas and a Cl-based gas. The polymer is
dissolved in-situ using the plasma etchant. Thus, frequency at which PM
(preventative maintenance) of the equipment must be performed is
minimized, and the method contributes to maximizing the yield and quality
of the semiconductor devices.