A method for forming patterns which are aligned on either side of a thin film deposited on a substrate. The method includes depositing a first pattern layer on the thin film which may occur before or after the local etching of the thin film to form a first marking. The method includes etching the first pattern layer in order to form a first pattern and depositing a first bonding layer for covering the first marking and the first pattern. The method may include suppressing the substrate as well as etching the first bonding layer to form a second marking at the location of the first marking. The method includes depositing a second pattern layer, and etching the second pattern layer to form the second pattern.