A method for monitoring parameters of an exposure device for immersion lithography and an exposure device for immersion lithography are provided. In the course of the immersion lithography, the immersion liquid is fed to an analysis device as early as during the exposure. Alterations of the immersion liquid are detected during the exposure process on the basis of a comparison with desired values. The triggering of a warning signal indicates the deviations of the parameters of alterations of the immersion liquid from the associated desired values.