A semiconductor component having a drift path (2) which is formed in a semiconductor body (1), is composed of a semiconductor material of first conductance type. The drift path (2) is arranged between at least one first and one second electrode (3, 4) and has a trench structure in the form of at least one trench (18). A dielectric material which is referred to as a high-k material and has a relative dielectric constant .epsilon..sub.r where .epsilon..sub.r.gtoreq.20 is arranged in the trench structure such that at least one high-k material region (5) and one semiconductor material region (6) of the first conductance type are arranged in the area of the drift path (2).