An apparatus, system, and method are disclosed for modifying memory device
timing and voltage. A detection module detects a change of memory device
stress. A timing modification module modifies the memory device timing in
response to the change of the memory device stress. In addition, a
voltage modification module modifies the memory device voltage in
response to the change of the memory device stress. In one embodiment, a
processor pause module pauses the operation of a processor module while
the timing modification module modifies the memory device timing and the
voltage modification module modifies the memory device voltage.