There are provided a cleaning solution for a silicon surface containing a buffer solution including acetic acid (CH.sub.3COOH) and ammonium acetate (CH.sub.3COONH.sub.4), iodine oxidizer, hydrofluoric acid (HF), and water. In a method for fabricating a semiconductor device, a silicon substrate may have an exposed silicon surface, which may be cleaned using a cleaning solution that contains a buffer solution including acetic acid and ammonium acetate, iodine oxidizer, hydrofluoric acid, and water.