A semiconductor device includes a first device region including a
plurality of source regions and a plurality of drain regions of first
conductivity type transistors, a plurality of loop-shaped gate electrode
regions of the first conductivity type transistors, a second device
region including a plurality of source regions and a plurality of drain
regions of a second conductivity type transistors, a plurality of
loop-shaped gate electrode regions of the second conductivity type
transistors, a first wiring configured to supply a first voltage to at
least one of the source regions of the first device region, a second
wiring configured to supply a second voltage to at least one of the
source regions of the second device region, and a third wiring
electrically coupled to the drain regions of the first and second device
regions and to the gate electrode regions of the first and the second
conductivity type transistors.