When a selection TFT and a correction TFT are turned on, a data voltage of a data line is stored in a storage capacitor as a gate voltage of a driving TFT. After turning off the selection TFT, a voltage of a capacitor line SC falls, thereby turning on the driving TFT to supply a driving current to an organic EL element. The correction TFT is in the ON state before the capacitor line SC falls, and is turned off in the course of the fall of the line. Consequently, the capacitance of the correction TFT changes during the fall of the gate voltage, and the gradient of the gate voltage fall of the driving TFT is changed, thereby setting the gate voltage after the capacitor line SC falls in accordance with variation in threshold of the driving TFT. Particularly by disposing the driving TFT and the correction TFT adjacent to each other, the two TFTs are provided with the same properties to achieve effective correction.

 
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