A process for manufacturing a non-volatile memory structure, in particular of a cross-point type provided with an array of memory cells, including forming bottom electrodes on a substrate; forming areas of active material on the bottom electrodes; and forming top electrodes on the areas of active material. The memory cells are defined at the intersection of the bottom electrode with the top electrode. At least one from among the steps of forming bottom electrodes, forming areas of active material, and forming top electrodes includes using soft-lithography techniques, chosen from amongst "microtransfer molding", "micromolding in capillary", and "microcontact printing". According to a first type of structure, the step of forming areas of active material includes forming strips of active material in a way self-aligned with respect to the bottom electrodes or the top electrodes; according to a different type of structure, the step of forming areas of active material envisages forming monolayer or multilayer pads between the bottom electrodes and the top electrodes.