A semiconductor device includes a capacitor which includes a capacitor
insulating film at least including a first insulating film and a
ferroelectric film formed in contact with the first insulating film,
containing a compound of a preset metal element and a constituent element
of the first insulating film as a main component and having a dielectric
constant larger than that of the first insulating film, a first capacitor
electrode formed of one of Cu and a material containing Cu as a main
component, and a second capacitor electrode formed to sandwich the
capacitor insulating film in cooperation with the first capacitor
electrode.