Structures and fabrication methods for a memory are provided. The memory includes an array of memory cells, where each memory cell has a pillar extending outwardly from a substrate. The pillar includes a first contact layer and a second contact layer separated by an insulating layer. A transistor is formed along side of the pillar. A plurality of buried bit lines are formed of semiconductor material and disposed below the pillars in the array memory cells to interconnect the first contact layer of column adjacent pillars in the array of memory cells. In an embodiment, each word line of a plurality of word lines is disposed orthogonally to the plurality of buried bit lines in a trench between rows of the pillars to address gates of the transistors that are adjacent to the trench.