A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection terminal formed on the first face of the semiconductor substrate; a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal; an electronic element formed on or above the second face of the semiconductor substrate; a second electrode electrically connected to the electronic element and having a top face and a rear face; a groove portion formed on the second face of the semiconductor substrate and having a bottom face including at least part of the rear face of the second electrode; and a conductive portion formed in the groove portion and electrically connected to the rear face of the second electrode.

 
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> Semiconductor device and method for fabricating the same

> Seal cover structure comprising a nickel-tin (Ni--Sn) alloy barrier layer formed between a nickel (Ni) plating layer and a gold-tin (Au--Sn) brazing layer having Sn content of 20.65 to 25 WT % formed on the seal cover main body

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