A method for configuring the optical transfer of a mask pattern onto a substrate using a lithographic apparatus is presented. In an embodiment of the invention, the method includes calculating a size of a printed sidelobe to be generated as a result of optical transfer of the mask pattern onto the substrate; and determining a plurality of lithographic parameters for optical transfer of the mask pattern onto the substrate that yields an optimization of a high latitude for the mask pattern and a small printed sidelobe size.