A VCSEL including a substrate, a first semiconductor layer of a first conductivity-type formed on the substrate, an active layer formed on the first semiconductor layer, a second semiconductor layer of a second conductivity-type formed on the active layer, a first electrode wiring formed on a main surface of the substrate and electrically connected with the first semiconductor layer, a second electrode wiring formed on the main surface of the substrate and electrically connected with the second semiconductor layer, and a light emitting portion formed on the substrate for emitting laser light. A contact portion at which the first electrode wiring is electrically connected to the first semiconductor layer is formed in a range equal to or greater than .pi./2 radians and within .pi. radians, centering on the light emitting portion.